• All
Features
    • Features

      Overload capability

      TRENCHSTOP™ IGBT7 allows a maximum junction temperature of 175°C where as TRENCHSTOP™ IGBT4 is limited to 150°C. It is beneficial for drives application due to the need of repetitive short overload operation.

      Overload Capability
      By allowing a maximum junction temperature of 175°C TRENCHSTOP™ IGBT7 is optimized for drives applications
    • Features

      On state voltage

      Compared to TRENCHSTOP™ IGBT4, IGBT7 lowers on-state voltage by around 20%. This brings a significant reduction in losses to target applications, especially to industrial drives, which usually operate with moderate switching frequencies.

      Lower on state voltage – VCE(sat) and Vf
      IGBT7 lowers on-state voltage VCE(sat) and Vf by around 20%
    • Features

      Controllability

      The TRENCHSTOP™ IGBT7 offers a high level of controllability to match the motor insulation requirements or EMI limitations. The controllability corresponds to the device’s ability to vary the dv/dt by adjusting the value of the gate resistor (RG).

      Enhanced controllability of dv/dt
    • Features

      Improved diode

      The EC7 emitter-controlled diode reduces the forward voltage by 100 mV relative to the previous generation EC4. This also lowers the reverse recovery losses. In addition, it improves softness, which benefits the inverter’s EMI behavior.

      Improved free wheeling diode softness
      Reduced forward voltage and lower reverse recovery losses
    Benefits
      • Benefits

        Increased power

        The EconoDUAL™ 3 with TRENCHSTOP™ IGBT7 can reach up to 900 A. Benefit from higher inverter output current for the same frame size, reduced system cost by avoiding paralleling of modules.

        • FF900R12ME7_B11
        50 % increased power with TRENCHSTOP™ IGBT7
        Up to 50 % more power by using the same packages
      • Benefits

        Frame size jump

        An application example for general-purpose drives (GPD) compares modules built with IGBT4 and IGBT7 technologies. This illustrates how power density can be increased while lowering system cost.

        • FP25R12W1T7_B11
        Higher power density due to use of smaller power modules
      • Benefits

        Low losses

        The conduction losses at the given dv/dt limitation are significantly decreased. Moreover, there is a reduction in diode losses which leads to overall 15% lower power losses.

        Low losses to meet energy efficiency requirements
      • Benefits

        Optimized driving

        CGE and CGC are balanced to give the IGBT7 full control over the dv/dt, and to optimize the switching waveform. CGE is designed to avoid parasitic turn-on effects, zero voltage supply for turn-off is feasible (unipolar gate driver power supply).

        IGBT7 is designed for zero voltage turn-off and optimized for simple driving